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參數資料
| 型號： | SKW25N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴散核武器條約與軟，恢復快反平行快恢復二極管技術 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 334K |
| 代理商： | SKW25N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
SKW25N120
Power Semiconductors
1
Rev. 2_1 Apr 06
T
j
Marking
Package
SKW25N120
1200V
25A
2.9mJ
150
°
C
K25N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
46
25
V
A
I
Cpuls
-
84
84
I
F
42
25
I
Fpuls
V
GE
t
SC
80
±
20
10
V
μ
s
P
tot
313
W
T
j
,
T
stg
T
s
-55...+150
260
°
C
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21
(TO-247AC)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SKW25N120 | 制造商:Infineon Technologies AG 功能描述:IGBT FAST |
| SKW25N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW25N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW25N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 46A 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 46A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 46A 313W TO247-3 |
| SKW25N120XK | 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 46A 3-Pin(3+Tab) TO-247 Tube |
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