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參數(shù)資料
型號(hào): skw30n60
廠商: SIEMENS AG
英文描述: Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
中文描述: 快速的S - IGBT的不擴(kuò)散核武器條約與軟,恢復(fù)快反平行快恢復(fù)二極管(不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù))
文件頁(yè)數(shù): 1/13頁(yè)
文件大小: 271K
代理商: SKW30N60
SKW30N60
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKW30N60
600V
30A
2.5V
150
°
C
TO-247AC
Q67040-S4244
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
600V,
T
j
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
600
V
A
41
30
I
Cpuls
-
112
112
I
F
41
30
I
Fpuls
V
GE
t
SC
112
±
20
10
V
μ
s
P
tot
250
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKW30N60_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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SKW30N60HS 功能描述:IGBT 晶體管 HIGH SPEED NPT TECH 600V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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