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參數(shù)資料
| 型號(hào)： | SLCD-61N1 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 25K |
| 代理商： | SLCD-61N1 |
SLCD-61N1
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Available in arrays where # indicates number of
elements ( maximum of 9 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency.
They are particularly
suited to power conversion applications due to their
low
internal
impedance,
relatively
high
shunt
impedance, and stability. These devices also provide
a reliable, inexpensive detector for applications such
as light beam sensing and instrumentation. The
electrical characteristics below are per element.
In
the multi-element arrays the cathodes are common to
all elements.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Anode
Dimensions in mm. (+/- 0.13)
Cathode
Sensitive Area
(10.4 sq. mm.)
0.4
5.08
2.54
Also available with leads as part number SLSD-71N1
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
0.4
0.5
mA
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current
1.7
A
VR=5V, Ee=0
CJ
Junction Capacitance
0.4
nF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
Specifications subject to change without notice
104117 REV 0
Notes: (1) Ee = light source @ 2854
°K
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLCD-61N1 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N2 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:1A; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:105C; Wavelength Typ:930nm ;RoHS Compliant: Yes |
| SLCD-61N2 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N3 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:1.7A; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:125C; Wavelength Typ:930nm ;RoHS Compliant: Yes |
| SLCD-61N3 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
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