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| 型號： | SLD-70IR1C |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | SLD-70IR1C |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-70IR1
Visible Light Rejection Filter
Planar Photodiode
Features
Low capacitance
Low leakage current
Linear response vs irradiance
IR pass filter
Multiple dark current ranges available
Description
This planar photodiode is designed to maximize
response in the infrared spectrum of received
energy. It is supplied on a ceramic base with an IR
transmissive epoxy dome package that rejects
visible light wavelengths. Photodiodes may operate
in either photovoltaic or reverse bias mode to provide
low capacitance with fast switching speed.
High
sensitivity and low dark current allow use in even low
irradiance applications.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +85°C
Operating Temperature
-20
°C to +85°C
Soldering Temperature (1)
260
°C
Notes: (1) >2 mm from case for < 5 sec.
(2) Ee = source @ 2854
°K.
(3) Ee = source @
λ = 880 nm
Chip Size = 1.7 mm x 1.7 mm
Active Area = 2.0 sq.mm.
IR Epoxy
Anode
Cathode
Dimensions in mm. (+/- 0.20)
Max.
Red dot
1.9
38 Nom.
6.3
7.2
3.4
0.5
5.1
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units Test Conditions
ISC
Short Circuit Current
60
100
A
VR=0V, Ee=25mW/cm
2 (2)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(2)
ID
Reverse Dark Current:
SLD-70IR1A
100
nA
VR=100mV, Ee=0
SLD-70IR1B
100
nA
VR=5V, Ee=0
SLD-70IR1C
10
nA
VR=5V, Ee=0
SLD-70IR1D
1
nA
VR=5V, Ee=0
SLD-70IR1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
50
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=5V, RL=1k
(3)
tF
Fall Time
1.5
s
VR=5V, RL=1k
(3)
TCI
Temp. Coef., ISC
+0.2
%/
°C (2)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
990
nm
λ
R
Sensitivity Spectral Range
700
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice.
101737 REV 3
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