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參數資料
| 型號： | SM12G45 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| 文件頁數： | 1/5頁 |
| 文件大小： | 196K |
| 代理商： | SM12G45 |
SM12G45,SM12J45,SM12G45A,SM12J45A
2001-07-13
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400, 600V
R.M.S On
State Current
High Commutating (dv / dt)
MAXIMUM RATINGS
: I
T (RMS)
=
1
2A
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO
220AB
―
13
10G1A
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM12G45
SM12G45A
400
Repetitive Peak
Off
State Voltage
SM12J45
SM12J45A
V
DRM
600
V
R.M.S On
State Current
(Full Sine Waveform Tc = 98°C)
I
T (RMS)
12
A
120 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
132 (60Hz)
A
I
2
t Limit Value (t = 1~10ms)
I
2
t
72
A
2
s
Critical Rate of Rise of On
State
Current
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
GM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
相關PDF資料 |
PDF描述 |
|---|---|
| SM12G45A | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| SM12J45 | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| SM12J45A | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| SM12GZ47 | AC POWER CONTROL APPLICATIONS |
| SM12GZ47A | AC POWER CONTROL APPLICATIONS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SM12G45A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| SM12G48 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:AC POWER CONTROL APPLICATIONS |
| SM12G48A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:AC POWER CONTROL APPLICATIONS |
| SM12GZ47 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:AC POWER CONTROL APPLICATIONS |
| SM12GZ47(F) | 制造商:Toshiba 功能描述:Thyristor TRIAC 400V 132A 3-Pin (3+Tab) TO-220(NIS) Cut Tape |
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