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參數資料
| 型號： | SM2G54 |
| 廠商： | Toshiba Corporation |
| 英文描述： | AC POWER CONTROL APPLICATIONS |
| 中文描述： | 交流電源控制應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 226K |
| 代理商： | SM2G54 |
SM2G54,SM2L54
2004-07-15
1
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2G54,SM2L54
AC POWER CONTROL APPLICATIONS
Repetitive Peak OffState Voltage : V
DRM
= 800V
R.M.S. OnState Current
High Commutation (dv / dt)
MAXIMUM RATINGS
: I
T (RMS)
= 2A
: (dv / dt) c = 5V / μs (Min.)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak OffState Voltage
V
DRM
800
V
R.M.S. OnState Current
(Full Sine Waveform)
I
T (RMS)
2
A
8 (50Hz)
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I
TSM
8.8 (60Hz)
A
I
2
t Limit Value
I
2
t
0.32
A
2
s
Critical Rate of Rise of OnState
Current
(Note)
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
3
W
Average Gate Power Dissipation
P
G (AV)
0.3
W
Peak Gate Voltage
V
FGM
10
V
Peak Gate Current
I
GM
1.6
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note:
di / dt test condition
V
DRM
= 400V, I
TM
≤ 3A, t
gw
≥ 10μs, t
gr
≤ 250ns, i
gp
= I
GT
× 2.0
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.82g
1 : T1
2 : T2
3 : GATE
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