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參數資料
| 型號： | SM6A27HE3/2D |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 4600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 79K |
| 代理商： | SM6A27HE3/2D |
Document Number: 88383
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
190
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SM6A27
Vishay General Semiconductor
FEATURES
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175 °C capability suitable for high reliability
and automotive requirement
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
PRIMARY CHARACTERISTICS
VBR
27 V
PPPM (10 x 1000 μs)
4600 W
PD
6 W
IRSM
90 A
IFSM
600 A
TJ max.
175 °C
DO-218AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with 10/1000 μs waveform
PPPM
4600
W
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
6.0
W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
IRSM
90
A
Maximum working stand-off voltage
VWM
22.0
V
Peak forward surge current 8.3 ms single half sine-wave
IFSM
600
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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相關代理商/技術參數 |
參數描述 |
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