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參數資料
| 型號： | SM6GZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
| 文件頁數： | 1/5頁 |
| 文件大小： | 235K |
| 代理商： | SM6GZ47 |
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
2001-07-13
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage
R.M.S ON
State Current
High Commutating (dv / dt)
Isolation Voltage
MAXIMUM RATINGS
: V
DRM
= 400, 600V
: I
T (RMS)
= 6A
: V
ISOL
=
1
500V AC
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM6GZ47
SM6GZ47A
400
Repetitive Peak
Off
State Voltage
and Repetitive Peak
Reverse Voltage
SM6JZ47
SM6JZ47A
V
DRM
600
V
R.M.S On
State Current
(Full Sine Waveform Tc = 90°C)
I
T (RMS)
6
A
60 (50Hz)
Peak One Cycle Surge On-State
Current (Non
Repetitive)
I
TSM
66 (60Hz)
A
I
2
t Limit Value
I
2
t
18
A
2
s
Critical Rate of Rise of On
State
Current
(Note 1)
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
FGM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1min.)
V
ISOL
1500
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13
10H1A
Unit: mm
Note 1: di / dt test condition
V
DRM
= 0.5×Rated
I
TM
≤
9A
t
gw
≥
10μs
t
gr
≤
250ns
i
gp
= I
GT
×2.0
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