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參數資料
| 型號： | SM6T100A-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 103K |
| 代理商： | SM6T100A-E3 |
SM6T Series
Vishay General Semiconductor
Document Number: 88385
Revision: 04-Sep-07
www.vishay.com
81
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
600 W peak pulse power capability with a
10/1000 s waveform
Available in uni-directional and bi-directional
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
devices
use
CA
suffix
(e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VBR
6.8 V to 220 V
PPPM
600 W
PD
5.0 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation on 10/1000 s waveform (1)(2) (Fig. 1)
PPPM
600
W
Peak power pulse current with a 10/1000 s waveform (1) (Fig. 3)
IPPM
See next table
A
Power dissipation on infinite heatsink TA = 50 °C
PD
5.0
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to +150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SM6T100A-E3/2C | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T100A-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T100A-E3/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600w 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T100A-E3/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T100A-E3/5B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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