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參數資料
型號: SMA55
英文描述: Cascadable Amplifier 10 to 500 MHz
中文描述: 級聯放大器10至500 MHz
文件頁數: 1/2頁
文件大小: 362K
代理商: SMA55
Cascadable Amplifier
10 to 500 MHz
A55/ SMA55
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V2
1
Electrical Specifications: Z
0
= 50
, V
CC
= +15 V
DC
Parameter
Units
Typical
Guaranteed
25oC
0o to 50oC -54o to +85oC*
Frequency
MHz
5-600
10-500
10-500
Small Signal Gain (min)
dB
14.7
14.0
13.5
Gain Flatness (max)
dB
±0.5
±0.8
±1.0
Reverse Isolation
dB
20
Noise Figure (max)
dB
5.0
6.0
6.5
Power Output
@ 1 dB comp. (min)
dBm
11.0
9.0
8.0
IP3
dBm
+24
IP2
dBm
+37
Second Order Harmonic IP
dBm
+42
VSWR Input / Output (max)
1.5:1 / 1.5:1
1.9:1 / 1.9:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
30
35
37
Features
AVAILABLE IN SURFACE MOUNT
MEDIUM OUTPUT LEVEL: +11 dBm (TYP.)
MEDIUM THIRD ORDER I.P. + 24 dBm (TYP.)
Description
The A55 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and
high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. Both TO-8 and Surface Mount packages are
Hermetically sealed, and MIL-STD-883 environmental screen-
ing is available
.
Product Image
Ordering Information
Part Number
Package
A55
TO-8
SMA55
Surface Mount
CA55
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62oC to +125oC
Case Temperature
+125oC
DC Voltage
+18 V
Continuous Input Power
13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 μsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125oC
Thermal Data: V
CC
= +15 V
DC
Parameter
Rating
Thermal Resistance θ
jc
45oC/W
Transistor Power Dissipation P
d
0.194 W
Junction Temperature Rise
Above Case T
jc
9oC
* Over temperature performance limits for part number CA55, guaranteed from 0
o
C to +50
o
C only.
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