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參數(shù)資料
| 型號： | SMA6J170A-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 118K |
| 代理商： | SMA6J170A-TR |
Characteristics
SMA6J
2/10
1
Characteristics
Table 1.
Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (1)
Tj initial = Tamb
600
W
P
Power dissipation on infinite heatsink
Tamb = 55 °C
4
W
IFSM
Non repetitive surge peak forward current for
unidirectional types
tp = 10 ms
Tj initial = Tamb
60
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-55 to +175
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
30
°C/W
Rth (j-a)
Junction to ambient on printed circuit on recommended pad layout
120
°C/W
Table 3.
Electrical characteristics - definitions (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
@ VRM
IPP
Peak pulse current
αT
Voltage temperature
coefficient
VF
Forward voltage
drop
RD
Dynamic resistance
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
Unidirectional
Bidirectional
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