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參數資料
| 型號： | SMA9.1C |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 0K |
| 代理商： | SMA9.1C |
SMA SERIES
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification
94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0
Volts to BV min
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional
device none cathode band denotes bi-directional
device
Weight : 0.002 ounces, 0.064 grams
SMA
All Dimensions in millimeter
SMA
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
2.92
2.29
1.27
1.63
0.31
0.15
4.83
5.59
0.05
0.20
2.01
2.62
0.76
1.52
B
A
C
H
E
F
G
D
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +175
C
IFSM
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
40
AMPS.
UNIT
PM(AV)
1.0
WATTS
Steady State Power Dissipation at TL =75 C
PPK
WATTS
PEAK POWER DISSIPATION AT TA = 25 C,
TP = 1ms (Note 1,2)
SYMBOLS
VALUE
Minimum 400
C
CHARACTERISTICS
(JEDEC METHOD)
STAND-OFF VOLTAGE - 6.8 to 200 Volts
POWER DISSIPATION - 400 WATTS
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TA= 25 C per fig.1.
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
Maximum Instantaneous forward voltage
at 35A for unidirectional devices only (Note 3)
VF
3.5
Volts
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSIA01
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