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參數資料
| 型號： | SMAJ58-HE3/5A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 105K |
| 代理商： | SMAJ58-HE3/5A |
Vishay General Semiconductor
SMAJ5.0 thru SMAJ188CA
Document Number 88390
12-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
400 W peak pulse power capability with a 10/1000 s
waveform, repetitive rate (duty cycle): 0.01 % (300 W
above 78 V)
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AC (SMA)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional use C or CA suffix (e.g. SMAJ10C,
SMAJ10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
400 W, 300 W
IFSM
40 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 78 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2) (see Fig. 1)
PPPM
400
W
Peak pulse current with a waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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| SMAJ58A-E3/61 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
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| SMAJ90CA-E3/5A | 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMBG130A-HE3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
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相關代理商/技術參數 |
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| SMAJ5913BT&R | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 3.3V 5% 3W 2-Pin DO-214AC T/R |
| SMAJ5918B-T | 功能描述:穩壓二極管 1.5W 5.1V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| SMAJ5918B-TP | 功能描述:穩壓二極管 1.5W 5.1V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| SMAJ5919B-T | 功能描述:穩壓二極管 1.5W 5.6V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| SMAJ5919B-TP | 功能描述:穩壓二極管 1.5W 5.6V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數:0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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