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參數資料
型號: SMAJ6491D
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 齊納二極管
英文描述: 5.6 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
封裝: PLASTIC, SMAJ, 2 PIN
文件頁數: 1/2頁
文件大小: 157K
代理商: SMAJ6491D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
6-20-07 REV B
WWW
.Microse
m
i
.CO
M
SMAJ4460 thru SMAJ4496, e3
and SMAJ6485 thru SMAJ6491, e3
1.5 Watt Zener Diodes
S C O T TS DALE DIVISION
DESCRIPTION
This 1.5 watt zener series in a low-profile light-weight plastic surface mount
configuration, with stress-relief J-bend contacts, meets or exceeds the electrical
performance of the 1N4460 thru 1N4496 and 1N6485 thru 1N6491. It also provides
double the overall surge performance by using a larger active die element. This
includes ESD protection per IEC61000-4-2, EFT protection per IEC61000-4-4, and
higher surge levels defined herein. The low-flat profile provides easier insertion or
automatic handling compared to other MELF style packages. Its thermally efficient
design lowers junction temperatures and extends operating temperature range
before derating begins. Power derates to zero at 150°C for these plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
SURFA C E MOUN T
ZEN ER
DO-214BA or AC
(SMAJ)
FEAT UR ES
Zener voltages: 3.3 volts to 200 volts
Metallurgically bonded
Reliability data per JESD22-A108, JESD22-A104,
JESD22-A113-B, JESD22-A101-B, and JESD22-A102
Thermally efficient surface mount with J-bends for
stress relief (flat handling surface for easier placement)
Options for screening in accordance with MIL-PRF-
19500/406 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to part
numbers. For example, designate a MXSMAJ4460 for a
JANTX screen.
RoHS Compliant devices available by adding “e3” suffix
APPLICA T ION S / BEN E FITS
For high reliability voltage regulation in low profile
surface mount locations requiring easy
placement and strain relief
Light weight for airborne or satellite applications
Superior surge quality to protect from ESD and
EFT transients per IEC61000-4-2 and -4-4 and
higher surge levels defined herein
POW E R DERATIN G – OU TLINE – MOUNTIN G PAD
MECHAN ICAL AN D PACK A GING
Molded epoxy package meets UL94V-0
Terminals: Tin-lead or RoHS compliant annealed
matte-Tin plated solderable per MIL-STD-750,
method 2026
Body marked with P/N without SMAJ letters
(ie. 4460, 4496, 6485, 4460, etc.)
Polarity is indicated by cathode band
Weight: 0.064 grams (approximate)
Tape & Reel packaging per EIA-481-2 with 12
mm tape and 2500 units per reel (13 inch reel)
MAX I MU M R A T I N G S
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1.5 watt steady-state maximum power
Thermal resistance, RθJL = 15 °C/W
Solder Temperatures: 260C for 10 s (maximum)
M
ax
imu
m
P
owe
r
Di
ss
ipa
ti
on
(W
a
tts
)
DIMENSIONS
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
0.5
1.5
2.5
2.0
1.0
A
.052
.103
1.32
2.62
B
.160
.180
4.06
4.57
C
.100
.110
2.54
2.79
D
.194
.216
4.93
5.49
E
.078
.115
1.98
2.92
F
.030
.060
0.76
1.52
G
--
.005
--
0.13
SMAJ4460
SM
AJ4496
&
SMAJ6485
SM
AJ6491
DIMENSION A IS WITHIN DO-214BA BUT HIGHER THAN
STANDARD JEDEC OUTLINES..DIMENSION B IS WIDER
THAN BOTH JEDEC OUTLINES FOR LOWER THERMAL
RESISTANCE
175 200
125 150
75
100
50
25
Figure 1. Power Derating Curve
Outline
TL, Lead Temperature (C) 3/8” from body
Mounting Pad
相關PDF資料
PDF描述
SMAJ4480C 43 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
SMAJ4485 68 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
SMAJ4495D 180 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
SMAJ4460DE3 6.2 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
SMAJ4476E3 30 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214BA
相關代理商/技術參數
參數描述
SMAJ6491E3/TR13 制造商:Microsemi Corporation 功能描述:1.5W, VZ = 5.6V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.5W 5.6V 5% SMAJ
SMAJ64A 功能描述:TVS 二極管 - 瞬態電壓抑制器 64volts 5uA 3.9 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMAJ64A R2 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 64V 400W 2-Pin SMA T/R
SMAJ64A/1 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 64V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMAJ64A/11 功能描述:TVS 二極管 - 瞬態電壓抑制器 400W 64V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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