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參數(shù)資料
| 型號： | SMAJP4KE250A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, DO-214BA, SMAJ, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 553K |
| 代理商： | SMAJP4KE250A |
SMAJP4KE6.8 thru SMAJP4KE400CA
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSD A L E DIVISION
W
.Mi
cr
os
em
i
.C
O
M
SMAJP4
KE6.8
thru
S
MA
JP4
KE4
00C
A
BREAKDOWN
VOLTAGE
V(BR) @
I(BR)
TYPE
NUMBER
RATED
STAND-
OFF
VOLTAGE
VWM
MIN.
MAX.
MAXIMUM
CLAMPING
VOLTAGE
VC MAX. @
IPP
MAXIMUM
REVERSE
LEAKAGE
CURRENT
ID @ VWM
MAXIMUM
PEAK
PULSE
CURRENT
IPP
MAXIMUM
TEMPERATURE
COEFFICIENT
of V(BR)
αV(BR)
V
mA
V
A
% /
oC
SMAJP4KE120
SMAJP4KE120A
SMAJP4KE130
SMAJP4KE130A
97.2
102.0
105.0
111.0
108.0
114.0
117.0
124.0
132.0
126.0
143.0
137.0
1
173.0
165.0
187.0
179.0
1
2.3
2.4
2.1
2.2
.107
SMAJP4KE150
SMAJP4KE150A
SMAJP4KE160
SMAJP4KE160A
121.0
128.0
130.0
136.0
135.0
143.0
144.0
152.0
165.0
158.0
176.0
168.0
1
215.0
207.0
230.0
219.0
1
1.9
1.95
1.7
1.8
.108
SMAJP4KE170
SMAJP4KE170A
SMAJP4KE180
SMAJP4KE180A
138.0
145.0
146.0
154.0
153.0
162.0
171.0
187.0
179.0
198.0
189.0
1
244.0
234.0
258.0
246.0
1
1.6
1.7
1.5
1.6
.108
SMAJP4KE200
SMAJP4KE200A
SMAJP4KE220
SMAJP4KE220A
162.0
171.0
175.0
185.0
180.0
190.0
198.0
209.0
220.0
210.0
242.0
231.0
1
287.0
274.0
344.0
328.0
1
1.4
1.5
1.0
.108
.110
SMAJP4KE250
SMAJP4KE250A
SMAJP4KE300
SMAJP4KE300A
202.0
214.0
243.0
256.0
225.0
237.0
270.0
285.0
275.0
263.0
330.0
315.0
1
360.0
344.0
430.0
414.0
1
1.0
.110
SMAJP4KE350
SMAJP4KE350A
SMAJP4KE400
SMAJP4KE400A
284.0
300.0
324.0
342.0
315.0
333.0
360.0
380.0
385.0
368.0
440.0
420.0
1
504.0
482.0
574.0
548.0
1
1.0
.110
Forward Voltage (Vf) @ 30 amps peak, 8.3 ms sine wave equal to 3.5 volts maximum for SMAJP4KE6.8 to 200. (Excluding Bidirectional)
For bi-directional construction, indicate a C or CA suffix after part number, i.e. SMAJP4KE170CA.
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
VWM
Rated Stand-Off Voltage
IPP
Peak Pulse Current
Ppp
Peak Pulse Power
VC (MAX)
Maximum Clamping Voltage
V(BR)
Breakdown Voltage
IT
Test Current
ID
Reverse leakage
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2002
6-16-2004 REV C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMAJP4KE33ATR | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMBGP6KE22CTR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBJP6KE11 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE130A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE170CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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參數(shù)描述 |
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