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參數(shù)資料
| 型號(hào)： | SMAJP4KE33CATR |
| 廠商： | MICROSEMI CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, DO-214BA, SMAJ, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 553K |
| 代理商： | SMAJP4KE33CATR |
SMAJP4KE6.8 thru SMAJP4KE400CA
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSD A L E DIVISION
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DESCRIPTION
PACKAGE
This Transient Voltage Suppressor (TVS) series is an economical molded
surface mount package with very low thermal resistance due to its unique
axial subassembly.
It is used for automotive applications and others to
protect voltage sensitive components from destructive or partial degradation.
They have a peak pulse power rating of 400 watts for 1 ms as depicted in
Figures 1 and 2. The package is configured for easy pick and place onto PC
Boards for automated handling. The J-bend terminations also provide stress
relief for use on a variety of PC Board materials.
DO-214AC or BA
(SMAJ)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Economical series for surface mounting
Available in both unidirectional and bi-directional (add
C or CA suffix to part number for bidirectional)
Voltages from 6.8 to 400 V Breakdown (VBR)
Fast Response
Moisture classification is Level 1 per IPC/JEDEC
J-STD-020B with no dry pack
Optional 100% screening for avionics grade is
available by adding MA prefix to part number for
added 100% temperature cycle -55
oC to +125oC
(10X) as well as surge (3X) and 24 hours HTRB with
post test VZ & IR (in the operating direction for
unidirectional or both directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, or JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers
Equivalent axial-lead packages available as P4KE6.8
to P4KE400CA
Suppresses transient up to 400 watts @ 10/1000
s (see Figure 1)
Protects sensitive components such as IC’s,
CMOS, Bipolar, BiCMOS, ECL, DTL, T
2L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: SMAJP4KE6.8 to SMAJP4KE91A or CA
Class 2: SMAJP4KE6.8 to SMAJP4KE47A or CA
Class 3: SMAJP4KE6.8 to SMAJP4KE24A or CA
Class 4: SMAJP4KE6.8 to SMAJP4KE12A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: SMAJP4KE6.8 to SMAJP4KE30A or CA
Class 2: SMAJP4KE6.8 to SMAJP4KE15A or CA
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Peak Pulse Power dissipation at 25
C: 400 watts at
10/1000 s (also see Fig 1,2, and 4)
Impulse repetition rate (duty factor): 0.01%
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
C to +150C
Thermal resistance: 17
C/W junction to lead or
82
C/W junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint (see
last page)
Steady-State Power dissipation: 5 watts at TL = 65
oC
or 1.52 watts at TA = 25
C when mounted on FR4 PC
board with recommended footprint
Forward Surge Current at 25C: 40 amps peak, 8.3
ms half-sine wave. Maximum voltage of 3.50 V
(unidirectional only)
Solder temperatures: 260
C for 10 s (maximum)
Molded epoxy package meets UL94V-0
Terminations are tin-lead plated solderable per
MIL-STD-750, method 2026
Cathode designated by cathode band for
unidirectional (none for bidirectional)
Weight: 0.1 grams (approximate)
Tape & Reel option: Standard per EIA-481-1-A
with 12 mm tape (add “TR” suffix to part number)
750 per 7 inch reel or 2500 per 13 inch reel
Marking only shows 4KExxx digits of part number
(e.g. 4KE6.8, 4KE12CA, 4KE30A, etc.)
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2002
6-16-2004 REV C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMAJP4KE6.8CATR | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMBGP6KE11CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBGP6KE18C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBGP6KE18TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBGP6KE200CTR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
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