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參數資料
| 型號： | SMBG51A/51-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封裝： | PLASTIC, SMBG, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 121K |
| 代理商： | SMBG51A/51-E3 |
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
0.180 (4.57)
0.160 (4.06)
0.016 (0.41)
0.006 (0.15)
0.020
(0.51) Max.
0.058 (1.47)
0.038 (0.97)
0.255 (6.48)
0.235 (5.97)
0.030 (0.76)
0.015 (0.38)
0.008 (0.20)
0.004 (0.10)
SEATING
PLANE
0.155 (3.94)
0.130 (3.30)
0.083 (2.10)
0.077 (1.96)
0.095 (2.41)
0.075 (1.90)
Cathode Band
Dimensions in inches
and (millimeters)
DO-215AA (SMBG)
Features
Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-215AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.003 oz., 0.093 g
Flammability: Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Mounting Pad Layout
d
e
d
n
e
t
x
E
e
g
n
a
R
e
g
a
t
l
o
V
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 600
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table Below
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4)
RθJA
100
°C/W
Typical thermal resistance, junction to lead
RθJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88456
www.vishay.com
24-Jul-03
1
0.165 (4.19)
0.085 (2.16)
0.060(1.27)
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| SMBG48C-E3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG8.5C-E3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBG51A-E3/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 51V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG51A-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 51V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG51A-E3/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 51V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG51A-E3/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 51V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG51A-E3/5B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 51V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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