欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SMBG8.0CA/5B
廠商: GENERAL SEMICONDUCTOR INC
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
文件頁數: 1/4頁
文件大小: 75K
代理商: SMBG8.0CA/5B
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
Dimensions in inches
and (millimeters)
DO-214AA (SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing (SMBG prefix)
lead form (DO-215AA)
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.003oz., 0.093g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 600
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table Below
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4)
R
θJA
100
°C/W
Typical thermal resistance, junction to lead
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
10/17/01
相關PDF資料
PDF描述
SMBG40A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SMBG64C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SMBG8.0C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SMBG9.0 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SMBG90C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
相關代理商/技術參數
參數描述
SMBG85 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR
SMBG85A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount TRANSZORB? Transient Voltage Suppressors
SMBG85A/2 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBG85A/52 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBG85A/55 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
主站蜘蛛池模板: 大庆市| 三门县| 彭阳县| 耒阳市| 大庆市| 正蓝旗| 外汇| 台北市| 贡嘎县| 东乡族自治县| 盐边县| 连平县| 鹿邑县| 上栗县| 个旧市| 信丰县| 富平县| 浦东新区| 怀仁县| 嘉祥县| 个旧市| 观塘区| 濉溪县| 余庆县| 奎屯市| 牡丹江市| 襄城县| 堆龙德庆县| 江都市| 林芝县| 米脂县| 巧家县| 兴业县| 巴塘县| 苍梧县| 鄄城县| 河津市| 宁陕县| 金山区| 津南区| 纳雍县|