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參數資料
| 型號： | SMBJ11A-51 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 75K |
| 代理商： | SMBJ11A-51 |
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Device
Breakdown Voltage
Maximum
Device Type
Marking
V(BR) at IT(1)
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Modified
Code
(V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
“J” Bend Lead
UNI
BI
Min
Max
IT (mA)
VWM (V)
ID (
A) (3)
(A)(2)
VC (V)
SMBJ33
ML
CL
36.7
44.9
1.0
33
1.0
10.2
59.0
SMBJ33A
MM
CM
36.7
40.6
1.0
33
1.0
11.3
53.3
SMBJ36
MN
CN
40.0
48.9
1.0
36
1.0
9.3
64.3
SMBJ36A
MP
CP
40.0
44.2
1.0
36
1.0
10.3
58.1
SMBJ40
MQ
CQ
44.4
54.3
1.0
40
1.0
8.4
71.4
SMBJ40A
MR
CR
44.4
49.1
1.0
40
1.0
9.3
64.5
SMBJ43
MS
CS
47.8
58.4
1.0
43
1.0
7.8
76.7
SMBJ43A
MT
CT
47.8
52.8
1.0
43
1.0
8.6
69.4
SMBJ45
MU
50.0
61.1
1.0
45
1.0
7.5
80.3
SMBJ45A
MV
50.0
55.3
1.0
45
1.0
8.3
72.7
SMBJ48
MW
53.3
65.1
1.0
48
1.0
7.0
85.5
SMBJ48A
MX
53.3
58.9
1.0
48
1.0
7.8
77.4
SMBJ51
MY
56.7
69.3
1.0
51
1.0
6.6
91.1
SMBJ51A
MZ
56.7
62.7
1.0
51
1.0
7.3
82.4
SMBJ54
ND
60.0
73.3
1.0
54
1.0
6.2
96.3
SMBJ54A
NE
60.0
66.3
1.0
54
1.0
6.9
87.1
SMBJ58
NF
64.4
78.7
1.0
58
1.0
5.8
103
SMBJ58A
NG
64.4
71.2
1.0
58
1.0
6.4
93.6
SMBJ60
NH
66.7
81.5
1.0
60
1.0
5.6
107
SMBJ60A
NK
66.7
73.7
1.0
60
1.0
6.2
96.8
SMBJ64
NL
71.1
86.9
1.0
64
1.0
5.3
114
SMBJ64A
NM
71.1
78.6
1.0
64
1.0
5.8
103
SMBJ70
NN
77.8
95.1
1.0
70
1.0
4.8
125
SMBJ70A
NP
77.8
86.0
1.0
70
1.0
5.3
113
SMBJ75
NQ
83.3
102
1.0
75
1.0
4.5
134
SMBJ75A
NR
83.3
92.1
1.0
75
1.0
5.0
121
SMBJ78
NS
86.7
106
1.0
78
1.0
4.3
139
SMBJ78A
NT
86.7
95.8
1.0
78
1.0
4.8
126
SMBJ85
NU
94.4
115
1.0
85
1.0
4.0
151
SMBJ85A
NV
94.4
104
1.0
85
1.0
4.4
137
SMBJ90
NW
100
122
1.0
90
1.0
3.8
160
SMBJ90A
NX
100
111
1.0
90
1.0
4.1
146
SMBJ100
NY
111
136
1.0
100
1.0
3.4
179
SMBJ100A
NZ
111
123
1.0
100
1.0
3.7
162
SMBJ110
PD
122
149
1.0
110
1.0
3.1
196
SMBJ110A
PE
122
135
1.0
110
1.0
3.4
177
SMBJ120
PF
133
163
1.0
120
1.0
2.8
214
SMBJ120A
PG
133
147
1.0
120
1.0
3.1
193
SMBJ130
PH
144
176
1.0
130
1.0
2.6
231
SMBJ130A
PK
144
159
1.0
130
1.0
2.9
209
SMBJ150
PL
167
204
1.0
150
1.0
2.2
268
SMBJ150A
PM
167
185
1.0
150
1.0
2.5
243
SMBJ160
PN
178
218
1.0
160
1.0
2.1
287
SMBJ160A
PP
178
197
1.0
160
1.0
2.3
259
SMBJ170
PQ
189
231
1.0
170
1.0
2.0
304
SMBJ170A
PR
189
209
1.0
170
1.0
2.2
275
SMBJ188
PT
209
255
1.0
188
1.0
1.7
344
SMBJ188A
PS
209
231
1.0
188
1.0
2.0
328
Notes: (1) Pulse test: tp
≤ 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ11A-7 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 11V 600 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ11A-7P | 功能描述:TVS 二極管 - 瞬態電壓抑制器 11V 600 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ11AE3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 11V 600W 2PIN DO-214AA - Bulk |
| SMBJ11A-E3/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 11V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ11A-E3/2C | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 11V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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