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參數(shù)資料
型號: SMBJ130
廠商: GENERAL SEMICONDUCTOR INC
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: PLASTIC, SMB, 2 PIN
文件頁數(shù): 1/4頁
文件大小: 75K
代理商: SMBJ130
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
Dimensions in inches
and (millimeters)
DO-214AA (SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing (SMBG prefix)
lead form (DO-215AA)
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.003oz., 0.093g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 600
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table Below
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4)
R
θJA
100
°C/W
Typical thermal resistance, junction to lead
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
10/17/01
相關(guān)PDF資料
PDF描述
SMBJ13 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMCG10 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG51A 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG51CA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG75 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMBJ130(C) 制造商:BYTES 制造商全稱:Bytes 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMBJ130(C)A 制造商:BYTES 制造商全稱:Bytes 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMBJ130A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 130volts 5uA 2.9 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ130A R4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 130V 600W 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ130A R5 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 130V 600W 2-Pin SMB T/R
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