欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SMBJ20A/2B
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: PLASTIC, SMB, 2 PIN
文件頁數: 4/5頁
文件大小: 111K
代理商: SMBJ20A/2B
SMBJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
P
PPM
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1s
1.0s10s
td — Pulse Width (sec.)
100s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I FSM
Peak
Forward
Surge
Current
(A)
tp — Pulse Duration (sec)
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J
Junction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
www.vishay.com
Document Number 88392
4
19-Apr-04
相關PDF資料
PDF描述
SMBJ22A/2B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ33A/2B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ5.0A/2B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SRP300D-E3/73 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
SA10CHE3/54 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
相關代理商/技術參數
參數描述
SMBJ20A-7 功能描述:TVS 二極管 - 瞬態電壓抑制器 20V 600 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ20A-7P 功能描述:TVS 二極管 - 瞬態電壓抑制器 20V 600 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ20A-CUT TAPE 制造商:LITTELFUSE 功能描述:SMBJ Series 32.4 V 0.6 kW Surface Mount Uni-Directional TVS Diode - DO-214AA
SMBJ20AE3 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 20V 600W 2PIN DO-214AA - Bulk
SMBJ20A-E3/1 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 20V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
主站蜘蛛池模板: 铜川市| 垫江县| 武安市| 丰县| 十堰市| 太保市| 内江市| 湘西| 石河子市| 海晏县| 云阳县| 涞源县| 博乐市| 永修县| 黎平县| 铅山县| 女性| 灌阳县| 吉林省| 永春县| 祁连县| 玛曲县| 广灵县| 怀柔区| 宜兴市| 大田县| 宝山区| 上犹县| 普陀区| 上虞市| 鄂伦春自治旗| 突泉县| 鹤壁市| 许昌市| 乌兰察布市| 册亨县| 丹阳市| 柳河县| 从江县| 长岭县| 灵宝市|