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參數資料
| 型號： | SMBJ30-M3/5B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 93K |
| 代理商： | SMBJ30-M3/5B |
Document Number: 89284
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB Transient Voltage Suppressors
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use C or CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
600 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DO-214AA (SMB J-Bend)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
PPPM (1)(2)
600
W
Peak pulse current with a 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
IFSM (2)
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ45CA-M3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ6.5A-M3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMCJ130A-M3/57T | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ14A-M3/57T | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ188A-M3/9AT | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ33 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 33Vr 600W 11.3A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 33V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33/2 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 33V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33/2 | 制造商:Vishay Semiconductors 功能描述:DIODE TVS SMB 600W 33V |
| SMBJ33/2B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 33V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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