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參數資料
型號: SMBJ43C/5
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 參考電壓二極管
英文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: PLASTIC, SMB, 2 PIN
文件頁數: 1/4頁
文件大小: 76K
代理商: SMBJ43C/5
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
Dimensions in inches
and (millimeters)
DO-214AA (SMB J-Bend)
10/4/00
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent
clamping capability
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing
(SMBG prefix) lead form (DO-215AA)
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes
the cathode, which is positive with respect to the
anode under normal TVS operation
Weight: 0.003oz., 0.093g
Packaging codes/options:
5/3.2K per 13” Reel (12mm tape), 32K/box
2/750 EA per 7” Reel (12mm tape), 40K/box
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.
.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 600
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table Below
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4)
R
θJA
100
°C/W
Typical thermal resistance, junction to lead
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
相關PDF資料
PDF描述
SMBJ6.5C/2 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ60CA/2 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ75C/2 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ78A/2 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMCJ10C/7 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相關代理商/技術參數
參數描述
SMBJ43CA 功能描述:TVS 二極管 - 瞬態電壓抑制器 43V 600W SMB Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43CA R4 功能描述:TVS 二極管 - 瞬態電壓抑制器 43V 600W 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43CA R5 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 43V 600W 2-Pin SMB T/R
SMBJ43CA 制造商:Littelfuse 功能描述:TVS DIODE 600W 43V DO-214AA
SMBJ43CA/1 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 43V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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