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參數資料
| 型號： | SMBJ58 |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 230K |
| 代理商： | SMBJ58 |
Silicon Avalanche Diodes
262
www .littelfuse .com
FEATURES
RoHS compliant
Voltage ratings from 5 to 440 volts
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low lead inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 A above 10V
High Temperature soldering: 250C/10 seconds at terminals
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number: E128662
SMBJ Series
600W Surface Mount Transient Voltage Supressors
MAXIMUM RATINGS AND CHARACTERISTICS
@25C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000s waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000s
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
VALUE
Min
600
SEE TABLE 1
100
-55 to +150
UNIT
Watts
Amps
°C
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
SYMBOL
PPPM
IPPM
IPSM
Tj, TsTG
SMBJ
Voltage
C A
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
ORDERING INFORMATION
RoHS
Mechanical Specifications:
Weight:
0.003ounce, 0.093 gram
Case:
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Mounting Position:
Any
Polarity:
Color band denotes cathode except
Bidirectional
Terminal:
Solder Plated solderable per
MIL-STD-750, Method 2026
Standard Packaging:
12mm tape (EIA STF RS-481)
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PDF描述 |
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| SMBJ400 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ5.0C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ85 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ9.0C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ33C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ58/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 58V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ58/2 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 58V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ58/5 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 58V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ58/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 58V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ58/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 58V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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