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參數資料
| 型號： | SMBJ64C-52 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | SMBJ64C-52 |
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I FSM
—
Peak
Forward
Surge
Current
(A)
tp — Pulse Duration (sec)
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J
—
Junction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ8.5C-51 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMCJ100-51 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ100A/51 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ100C/9A | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ110CA/9A | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ64CA | 功能描述:TVS 二極管 - 瞬態電壓抑制器 64volts 5uA 5.8 Amps Bi-Dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ64CA R4 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 64V 600W 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ64CA R5 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 64V 600W 2-Pin SMB T/R |
| SMBJ64CA/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 64V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ64CA/2 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 64V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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