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參數(shù)資料
| 型號： | SMBJ7.0A |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | GREEN, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 165K |
| 代理商： | SMBJ7.0A |
CREAT BY ART
UL Recognized File # E-326243
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Typical IR less than 1uA above 10V
XX
= Specific Device Code
G
= Green Compound
Y
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Unit
PPK
Watts
PD
Watts
TJ, TSTG
℃
RθJC
RθJA
10
55
Standard packaging: 12mm tape per EIA Std RS-481
Steady State Power Dissipation
3
Typical Thermal Resistance (Note 5)
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Version:F11
Note 4: VF=3.5V on SMBJ5.0 thru SMBJ90 Devices and VF=5.0V on SMBJ100 thru SMBJ170 Devices
Note 5: Measure on P.C.B. with 0.4" x 0.4" (10mm x 10mm) copper Pad Areas
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25℃ Per Fig. 2
Note 2: Mounted on 10 x 10mm (.035mm Think) Copper Pads to Each Terminal
Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum
-65 to +150
Minimum 600
Value
SMBJ SERIES
600 Watts Suface Mount Transient Voltage Suppressor
Marking Diagram
SMB/DO-214AA
Dimensions in inches and (millimeters)
Weight: 0.093 gram
Type Number
Operating and Storage Temperature Range
Peak Power Dissipation at TA=25℃, Tp=1ms(Note 1)
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170
2. Electrical Characterstics Apply in Both Directions
Devices for Bipolar Applications
Features
Polarity: Indicated by cathode band except bipolar
Mechanical Data
For surface mounted application
Terminals: Pure tin plated, lead free
Case: Molded plastic
Fast response time: Typically less than 1.0ps from
0 volt to BV min
High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
Plastic material used carried Underwriters
Laboratory Flammability Classification 94V-0
600 watts peak pulse power capability with a
10/1000 us waveform
℃
/W
Amps
Maximum Instantaneous Forward Voltage at 50.0A for
Unidirectional Only (Note 4)
VF
3.5 / 5.0
Volts
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)(Note 2, 3) - Unidirectional Only
IFSM
100
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SRAS8100 | 8 A, 100 V, SILICON, RECTIFIER DIODE |
| S2G | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SK33 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SK54 | 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SR35T/R13 | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ70A R4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 70V 600W 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ70A/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 70V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ70A/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 70V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ70A/2B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 70V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ70A/5 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 70V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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