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參數資料
| 型號： | SMBJ7.5A |
| 廠商： | BOURNS INC |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 354K |
| 代理商： | SMBJ7.5A |
Features
■ RoHS compliant*
■ Surface Mount SMB package
■ Standoff Voltage: 5.0 to 170 volts
■ Power Dissipation: 600 watts
Applications
■ IEC 61000-4-2 ESD (Min. Level 4)
■ IEC 61000-4-4 EFT
■ IEC 61000-4-5 Surge
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
SMBJ Transient Voltage Suppressor Diode Series
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specications are subject to change without notice.
Customers should verify actual device performance in their specic applications.
Parameter
Symbol
Value
Unit
Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2)
PPK
600
Watts
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
IFSM
100
Amps
Steady State Power Dissipation @ TL = 75 °C
PM(AV)
5.0
Watts
Maximum Instantaneous Forward Voltage @ IPP = 50 A
(For Unidirectional Units Only)
VF
(Note 5)
Volts
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
1.
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
2.
Thermal Resistance Junction to Lead.
3.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
4.
Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.
5.
VF = 3.5 V on SMBJ5.0A through SMBJ90A and VF= 5.0 V on SMBJ100A through SMBJ170A.
General Information
Asia-Pacic:
Tel: +886-2 2562-4117 Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500 Fax: +1-951 781-5700
www.bourns.com
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices
from 0 V to Minimum Breakdown Voltage.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the at conguration
minimizes roll away.
How to Order
SMBJ 5.0 CA
Package
SMBJ = SMA/DO-214AA
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
Sufx
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
*RoHS
COMPLIANT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ75A R4 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 75V 600W 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75A/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75A/2 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75A/2B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75A/5 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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