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參數資料
| 型號： | SMBJ7.5C-W |
| 廠商： | RECTRON LTD |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 35K |
| 代理商： | SMBJ7.5C-W |
RECTRON
RATING AND CHARACTERISTIC CURVES ( TFMBJ5.0 THRU TFMBJ170CA )
FIG. 2 - PULSE DERATING CURVE
PEAK
PULSE
POWER
(PPP)
OR
CURRENT
TA, AMBIENT TEMPERATURE,(
)
025
50
75
100
125
150
175
200
100
75
50
25
0
(IPP)
DERATING
IN
PERCENTAGE,%
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
C
J,
CAPACITANCE,
pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
6,000
1,000
100
10
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
C
J,
JUNCTION
CAPACITANCE,pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
6,000
1,000
100
10
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of IPPM
10/1000usec. Waveform
as Defined by R.E.A.
Peak Value
IPPM
tr = 10usec.
FIG. 3 - PULSE WAVEFORM
IPPM
,PEAK
PULSE
CURRENT,%
t, TIME,mS
0
1.0
2.0
3.0
4.0
50
100
150
HALF VALUE -
IPPM
2
td
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
,PEAK
PULSE
POWER,
KW
TP, PULSE WIDTH, sec
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
0.2X0.2"(5.0X5.0mm)
copper pad areas
100
10
1.0
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS
10mS
BIDIRECTIONAL
IFSM,
PEAK
FORWARD
SURGE
CURRENT
AMPERES
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
NUMBER OF CYCLES AT 60 Hz
200
100
10
1
10
100
8.3ms Single Half Sine-Wave
(JEDED Method)
SURGE CURRENT UNIDIRECTIONAL
Unidirectional only
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ75-E3/51 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75-E3/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75-E3/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75-E3/5B | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 75V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ75E3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 75V, ? 10%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 75VWM 134VC SMBJ |
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