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參數資料
| 型號： | SMBJ8.0A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DEVICES FOR BIPOLAR APPLICATIONS |
| 中文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | SMB, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 255K |
| 代理商： | SMBJ8.0A |
Silicon Avalanche Diodes
1
www.littelfuse.com
FEATURES
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 mA above 10V
High Temperature soldering: 250C/10 seconds at terminals
Plastic packages has Underwriters Laboratory
Flammability 94V-O
MECHANICAL CHARACTERISTICS
Case:JEDEC DO214AA. Molded plastic over glass passivated
junction
Terminal: Solder plated, solderable per MIL-STD-750
Method 2026
Polarity. Color band denotes positive end(cathode) except
Bidirectional
Standard Packaging: 12mm tape(EIA STF RS-481)
Weight: 0.003 ounce, 0.093 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types SMBJ5.0 thru types
SMBJ110(e.g. SMBJ5.OC, SMBJ170CA)
Electrical characteristics apply in both directions
SMBJ Series
600W Surface Mount Transient Voltage Supressors
MAXIMUM RATINGS @25C AMBIENT TEMPERATURE
AND CHARACTERISTICS (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000μs waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000μs
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
VALUE
Min
600
SEE TABLE 1
100
-55 to +150
-55 to +150
UNIT
Watts
Amps
Amps
°C
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
SYMBOL
PPPM
IPPM
IPSM
Tj, TsTG
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ85 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 85Vr 600W 4.4A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/2 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/52 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85/55 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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