- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385849 > SMBJ85CA-TR (意法半導體) TRANSILTM PDF資料下載
參數(shù)資料
| 型號： | SMBJ85CA-TR |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSILTM |
| 中文描述： | TRANSILTM |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 82K |
| 代理商： | SMBJ85CA-TR |
SMBJ5.0A-TR,CA-TR
SMBJ188A-TR,CA-TR
TRANSIL
TM
PEAK PULSEPOWER : 600W (10/1000
μ
s)
STAND OFFVOLTAGERANGE :
From5V to 188V.
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
JEDECREGISTEREDPACKAGEOUTLINE
FEATURES
SMB
(JEDECDO-214AA)
Symbol
P
PP
P
Parameter
Value
600
Unit
W
Peak pulsepower dissipation(seenote 1)
Tj initial= T
amb
T
amb
= 50
°
C
tp = 10ms
Tj initial= T
amb
Powerdissipationon infiniteheatsink
5
W
I
FSM
Non repetitivesurge peakforward
current forunidirectionaltypes
100
A
T
stg
T
j
Storagetemperaturerange
Maximumjunction temperature
- 65 to +175
150
°
C
°
C
°
C
T
L
Maximumlead temperaturefor solderingduring10 s.
260
Note 1
: Fora surge greater than the maximum values,the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25
°
C)
DESCRIPTION
TheSMBJ series areTRANSIL
TM
diodesdesigned
specifically for protecting sensitive equipment
againsttransientovervoltages.
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakesthem particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
January 1998 Ed: 3
Symbol
Parameter
Value
Unit
°
C/W
°
C/W
R
th (j-l)
Junctionto leads
20
R
th (j-a)
Junctionto ambienton printedcircuit on recommendedpad
layout
100
THERMALRESISTANCES
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| SMBTA20 | NPN Silicon AF Transistor |
| SMBTA43 | NPN Silicon Transistors for High Voltages |
| SMBTA64 | POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82% |
| SMC-E22E | 10mm, 4DIGIT INDICATOR DISPLAY |
| SMC36 | 3.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ85CA-TR | 制造商:STMicroelectronics 功能描述:TRANSIL 600W 85V BIDIR SMB |
| SMBJ85C-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85C-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85C-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85C-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。