- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄271919 > SMBJ85CA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF資料下載
參數(shù)資料
| 型號(hào)： | SMBJ85CA |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | SMBJ85CA |
23
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
SMBJ Series
Surface Mount – 600W > SMBJ series
Please refer to http://www.Littelfuse.com/series/SMBJ.html for current information.
SMBJ
S
eries
Description
Agency Approvals
SMBJ Series
The SMBJ series is designed specically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
applications to optimize
board space
temperature coefcient
ΔV
BR = 0.1% x VBR@25°C x ΔT
junction
capability at 10×1000μs
waveform, repetition rate
(duty cycles):0.01%
typically less than 1.0ps
from 0V to BV min
capability
resistance
R less than 1μA
above 12V
soldering guaranteed:
260°C/40 seconds at
terminals
Underwriters Laboratory
Flammability 94V-O
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Maximum Ratings and Thermal Characteristics
(T
A=25
O
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Pulse Power Dissipation at
T
A=25C by 10x1000μs waveform
(Fig.1)(Note 1), (Note 2)
P
PPM
600
W
Power Dissipation on innite heat
sink at T
A=50
O
C
P
M(AV)
5.0
W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
I
FSM
100
A
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
only (Note 4)
V
F
3.5V/5.0
V
Operating Junction and Storage
Temperature Range
T
J, TSTG
-65 to 150
°C
Typical Thermal Resistance Junction
to Lead
R
uJL
20
°C/W
Typical Thermal Resistance Junction
to Ambient
R
uJA
100
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A = 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F<3.5V for VBR _
<
200V and V
F<5.0V for VBR _
>
201V.
AGENCY
AGENCY FILE NUMBER
E128662/E230531
RoHS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMBJ90 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMCG10/57 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG12/57 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG20/9A | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG20CA/51 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ85CA R4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 85V 600W 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85CA R5 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 85V 600W 2-Pin SMB T/R |
| SMBJ85CA/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85CA/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ85CA/2B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。