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參數(shù)資料
| 型號： | SMBJP6KE11 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMBJ, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 560K |
| 代理商： | SMBJP6KE11 |
600 Watt TRANSIENT VOLTAGE
SUPPRESSOR
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2004
6-16-2004 REV A
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
SMBJP6KE6.8 thru SMBJP6KE200CA and
SMBGP6KE6.8 thru SMBGP6KE200CA
SMBJ(G)P6KE6.8-200A
BREAKDOWN VOLTAGE
V(BR)
Min.
Nom.
Max.
TEST
CURRENT
I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAX
STANDBY
CURRENT
ID @ VWM
MAX
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
IPP
TEMPERATURE
COEFFICIANT
of
V(BR)
αV(BR)
MICROSEMI
PART
NUMBER
(add SMBJ or
SMBG prefix)
VDC
mA
V
A
V
A
% /
oC
P6KE100
P6KE100A
P6KE110
P6KE110A
90
95
99
105
100
110
105
121
116
1
81
85.5
89.2
94
1
144
137
158
152
4.2
4.4
3.8
3.4
.106
.107
P6KE120
P6KE120A
P6KE130
P6KE130A
108
114
117
124
120
130
132
126
143
137
1
97.2
102
105
111
1
173
165
187
179
3.5
3.6
3.2
3.3
.107
P6KE150
P6KE150A
P6KE160
P6KE160A
135
143
144
152
150
160
165
158
176
168
1
121
128
130
136
1
215
207
230
219
2.8
2.9
2.6
2.7
.108
P6KE170
P6KE170A
P6KE180
P6KE180A
153
161
162
171
170
180
187
179
198
189
1
138
145
146
154
1
244
234
258
246
2.5
2.6
2.3
2.4
.108
P6KE200
P6KE200A
180
190
200
220
210
1
162
171
1
287
274
2.1
2.2
.108
Consult factory for higher voltages.
For Bidirectional construction, indicate a C or CA suffix after part number, i.e. SMBJP6KE200CA. Capacitance will be one-half that shown in Figure 4.
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
VWM
Working Peak (Standoff) Voltage
IPP
Peak Pulse Current
PPP
Peak Pulse Power
VC
Clamping Voltage
V(BR)
Breakdown Voltage
I(BR)
Breakdown Current for V(BR)
ID
Standby Current
GRAPHS
P
PP
–
Peak
Pulse
Po
w
er
–
kW
TC = 25
oC
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
Test waveform parmeters: tr=10
s, tp=1000 s
tw – Pulse Width -
s
FIGURE 2
FIGURE 1
Pulse Waveform for
Peak Pulse Power vs. Pulse Time
Exponential Surge
相關(guān)PDF資料 |
PDF描述 |
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| SMBJP6KE130A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE170CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE170CTR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE43CTR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJP6KE56A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJP6KE11A-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 15.6V 600W 39.1A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJP6KE11CA-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 15.6V 600W 39.1A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJP6KE120CA-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 102V 600W 2-Pin SMB T/R |
| SMBJP6KE12A-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 16.7V 600W 36.5A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJP6KE12CA-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 16.7V 600W 36.5A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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