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參數(shù)資料
| 型號(hào)： | SMBT12A |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-221AA |
| 封裝： | PLASTIC, SMB FLAT-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 126K |
| 代理商： | SMBT12A |
SMBT SERIES
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Peak pulse power: 600 W (10/1000 s)
Stand off voltage: 5, 12, 16, or 24 V
Unidirectional type
MECHANICAL DATA
Case : JEDEC DO-221AA
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device.
TJ
Operating Temperature Range
-55 to +175
TSTG
Storage Temperature Range
-55 to +175
C
IFSM
Non repetitve Peak Forward Surge
Current 8.3ms single half sine-wave @
TJ = 25 ℃
100
AMPS.
UNIT
PM(AV)
5.0
WATTS
Steady State Power Dissipation at TL =75 ℃
PPK
WATTS
PEAK POWER DISSIPATION AT TA = 25 ℃,
TP = 1ms (Note 1)
SYMBOLS
VALUE
Minimum 600
C
CHARACTERISTICS
SURFACE MOUNT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE - 5.0 to 24 Volts
POWER DISSIPATION - 600 WATTS
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TA= 25
per Fig.1.
℃
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only
VF
3.5
Volts
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
All Dimensions in millimeter
SMB FLAT
DIM.
MIN.
MAX.
A
C
D
E
F
G
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.90
1.05
0.76
1.52
SEMICONDUCTOR
LITE-ON
REV. 1, Nov-2010, KSIP02
SMB FLAT
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