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參數資料
型號: SMCG40-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
封裝: PLASTIC, SMCG, 2 PIN
文件頁數: 1/5頁
文件大?。?/td> 69K
代理商: SMCG40-E3
SMCG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88457
www.vishay.com
24-Jul-03
1
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 1500W
Features
Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
1500W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-215AB molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.007 oz., 0.21 g
Flammability: Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 1500
W
a 10/1000
s waveform(1)(2)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave (2)
IFSM
200
A
uni-directional only
Typical thermal resistance, junction to ambient (3)
R
θJA
75
°C/W
Typical thermal resistance, junction to lead
R
θJL
15
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Extended
Voltage
Range
0.280 (7.11)
0.260 (6.60)
0.016 (0.41)
0.006 (0.15)
0.020
(0.51) Max.
0.058 (1.47)
0.038 (0.97)
0.400 (10.16)
0.380 (9.64)
0.040 (1.02)
0.024 (0.61)
0.008 (0.20)
0.004 (0.10)
SEATING
PLANE
0.245 (6.22)
0.220 (5.59)
0.125 (3.17)
0.115 (2.92)
0.095 (2.41)
0.075 (1.90)
Cathode Band
DO-215AB (SMCG)
0.050 (1.27)
0.125 (3.17)
0.310 (7.87)
Mounting Pad Layout DO-215AB
Dimensions in inches
and (millimeters)
相關PDF資料
PDF描述
SMCG51C/51-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG58-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG64-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG7.5C/51-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG85A/51-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
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