- 您現在的位置：買賣IC網 > PDF目錄85379 > SMCG9.0A/59T (VISHAY SEMICONDUCTORS) 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB PDF資料下載
參數資料
| 型號： | SMCG9.0A/59T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封裝： | PLASTIC, SMCG, 2 PIN |
| 文件頁數： | 4/5頁 |
| 文件大小： | 69K |
| 代理商： | SMCG9.0A/59T |
SMCG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88457
4
24-Jul-03
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
C
J
—
Junction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
Uni-Directional
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
10
100
1,000
10,000
20,000
10
1
100
400
VWM — Reverse Stand-Off Voltage (V)
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage, VWM
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
1
10
100
10
100
200
Peak
Forward
Surge
Current,
Amperes
Number of Cycles at 60Hz
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = TJ max.
Uni-Directional
Bi-Directional
tp — Pulse Duration (sec)
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
相關PDF資料 |
PDF描述 |
|---|---|
| SL22/2BT | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SMBJ6.0A/2B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMCG12E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5637AE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5650E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMCG90A-E3/1T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 90V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCG90A-E3/51T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1500W 90V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCG90A-E3/57T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1500W 90V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCG90A-E3/59T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1500W 90V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCG90A-E3/9AT | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1500W 90V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發布緊急采購，3分鐘左右您將得到回復。