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參數(shù)資料
| 型號： | SMCJ130AHE3/57T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 106K |
| 代理商： | SMCJ130AHE3/57T |
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
Document Number: 88394
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMCJ188CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
1500 W
PD
6.5 W
IFSM (uni-directional only)
200 A
TJ max.
150 °C
DO-214AB (SMC)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)(2)
PPPM
1500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Power dissipation on infinite heatsink, TA = 50 °C
PD
6.5
W
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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| SMDA15C-8-TR3 | 300 W, BIDIRECTIONAL, 9 ELEMENT, SILICON, TVS DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMCJ130A-M3/57T | 制造商:Vishay Semiconductors 功能描述:1.5KW,130V 5%,UNIDIR,SMC TVS |
| SMCJ130A-M3/9AT | 制造商:Vishay Semiconductors 功能描述:1.5KW,130V 5%,UNIDIR,SMC TVS |
| SMCJ130A-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 130V 1500 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ130ATR | 功能描述:TVS DIODE 130VWM 209VC SMC 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 類型:齊納 單向通道:1 電壓 - 反向關(guān)態(tài)（典型值）:130V 電壓 - 擊穿（最小值）:144V 電壓 - 箝位（最大值）@ Ipp:209V 電流 - 峰值脈沖（10/1000μs）:7.2A 功率 - 峰值脈沖:1500W（1.5kW） 電源線路保護:無 應(yīng)用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AB，SMC 供應(yīng)商器件封裝:SMC（DO-214AB） 標(biāo)準(zhǔn)包裝:1 |
| SMCJ130A-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSILTM |
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