欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SMCJ20-E3/51T
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數: 4/6頁
文件大?。?/td> 106K
代理商: SMCJ20-E3/51T
www.vishay.com
4
Document Number 88394
26-Feb-07
Vishay General Semiconductor
SMCJ5.0 thru SMCJ188CA
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance junction to ambient air (1)
RθJA
75
°C/W
Typical thermal resistance junction to leads
RθJL
15
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCJ5.0A-E3/57T
0.211
57T
850
7" Diameter Plastic Tape & Reel
SMCJ5.0A-E3/9AT
0.211
9AT
3500
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
0.1
1
10
100
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
25
50
75
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
20000
10
1
100
400
Uni-Directional
Bi-Directional
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-off
Voltage VWM
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
相關PDF資料
PDF描述
SMCJ20A-E3/59T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
S3G/9T 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
SBLB25L20CT/31 12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-263AB
SS26/2BT 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA
SMA5J28CA-E3/2G 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
相關代理商/技術參數
參數描述
SMCJ20HE3/57T 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 20V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ20HE3/59T 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 20V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ20HE3/9AT 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 20V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ20HE3/9CT 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 20V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ210 制造商:LUGUANG 制造商全稱:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Surface Mount TVS
主站蜘蛛池模板: 江山市| 武陟县| 沅江市| 工布江达县| 长丰县| 唐河县| 辉县市| 闽清县| 钟祥市| 资阳市| 岳西县| 青浦区| 库车县| 罗山县| 山东| 泸西县| 射阳县| 江川县| 白山市| 平顶山市| 吉木乃县| 瑞安市| 新郑市| 英德市| 阿克陶县| 大同市| 扶余县| 锡林浩特市| 和平县| 乳山市| 襄樊市| 淳安县| 通道| 错那县| 兴宁市| 句容市| 兴仁县| 泸州市| 寿宁县| 吕梁市| 黔西县|