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參數(shù)資料
| 型號(hào)： | SMCJ5632AE3/TR13 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 426K |
| 代理商： | SMCJ5632AE3/TR13 |
Transient Voltage Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
01-24-2003 REV A
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCG5629 thru SMCG5665A
and SMCJ5629 thru SMCJ5665A
DESCRIPTION
APPEARANCE
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting
sensitive components requiring low clamping voltage levels. They are rated at high
current impulses typically generated by inductive switching transients. Other
benefits are achieved with low-profile surface mount J-bend or Gull-wing terminals
for stress-relief and lower weight. Its low-flat profile provides easier insertion or
automatic handling benefits compared to other MELF style packages. Options for
screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX,
MV or MSP respectively for part number prefixes and high reliability screening in
accordance with MIL-PRF-19500/507.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Working Standoff Voltages: 5.5 volts to 171 volts
Metallurgically bonded
Reliability data per JESD22-A108, JESD22-A104,
JESD22-A113-B, JESD22-A101-B, and JESD22-A102
Thermally efficient surface mount with J-bends or
Gull wings termination for stress relief (flat handling
surface and easier placement)
Options for screening in accordance with MIL-PRF-
19500/500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate a MXSMCJ5629A for a JANTX screen.
For high reliability transient voltage suppression in
low profile surface mount locations requiring easy
placement and strain relief
Light weight for airborne or satellite applications
Superior surge quality to protect from ESD and EFT
transients per IEC61000-4-2 and -4-4
Lightning surge protection per IEC61000-4-5 for
Class 1 and 2 with source impedance of 42 Ohms as
well as Class 3 and 4 selectively at lower voltages
(VWM) and higher surge current (IPP) ratings herein
Protects sensitive components such as ICs, CMOS,
Bipolar, BiCMOS, ECL, DTL, T
2L, etc.
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1500 Watts of Peak Pulse Power at 10/1000 s as
shown in Figure 3 (see Figure 1 for other tP values)
Thermal resistance, RθJL = 20°C/W
Impulse repetition rate (duty factor): 0.01%
5.0 Watt steady-state maximum power at TL =25°C
tclamping (0V to V(BR) min): 50 picoseconds max
(theoretical)
Forward voltage VF @ 100 Amps 8.3 ms: 3.5 V max.
Molded epoxy package meets UL94V-0
Terminals: Solderable per MIL-STD-750
Method 2026. (max 260 °C for 10 sec.)
Body marked with P/N without SMCJ or SMCG letters
(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)
Cathode indicated by band
Weight: 0.25 grams (approximate)
Tape & Reel packaging per EIA-481
(2500 units/reel)
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities)
Breakdown
Voltage*
(VBR)
MIN. MAX.
Test
Current
(I(BR))
Rated
Standoff
Voltage
(VWM)
Maximum
Standby
Current
(ID at VWM)
Maximum Peak
Reverse Voltage
(VC max. at IPP)
Maximum Peak
Pulse Current
(IPP)
MICROSEMI
Part Number
Modified
“G”
Bend Lead
MICROSEMI
Part Number
Modified
“J”
Bend Lead
Vdc
mAdc
V
Adc
V
A
SMCG5629
SMCG5629A
SMCG5630
SMCG5630A
SMCJ5629
SMCJ5629A
SMCJ5630
SMCJ5630A
6.12
6.45
6.75
7.13
7.48
7.14
8.25
7.88
10
5.50
5.80
6.05
6.40
1000
500
10.8
10.5
11.7
11.3
139
143
128
132
SMCG5631
SMCG5631A
SMCG5632
SMCG5632A
SMCJ5631
SMCJ5631A
SMCJ5632
SMCJ5632A
7.38
7.79
8.19
8.65
9.02
8.61
10.0
9.55
10
1
6.63
7.02
7.37
7.78
200
50
12.5
12.1
13.8
13.4
120
124
109
112
SMCG5633
SMCG5633A
SMCG5634
SMCG5634A
SMCJ5633
SMCJ5633A
SMCJ5634
SMCJ5634A
9.00
9.5
9.9
10.5
11.0
10.5
12.1
11.6
1
8.10
8.55
8.92
9.40
10
5
15.0
14.5
16.2
15.6
100
103
93
96
SMCG/J
5629
thru
SMCG/J5
665
A
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PDF描述 |
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| SMCG5638E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5637/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5635E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5635AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5642/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMCJ5632E3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 8.19V, VBRMAX = 10.0V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 7.37VWM 13.8VC DO214AB |
| SMCJ5633 | 制造商:Microsemi Corporation 功能描述:TVS SGL 8.1V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJ5633/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 9.00V, VBRMAX = 11.0V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 8.1VWM 15VC DO214AB |
| SMCJ5633A | 制造商:Microsemi Corporation 功能描述:TVS SGL 8.55V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJ5633A/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 9.5V, VBRMAX = 10.5V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 8.55VWM 14.5VC DO214AB |
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