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參數資料
| 型號： | SMCJ6067 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CMOS Triple 3-Input NAND Gate 14-SOIC -55 to 125 |
| 中文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 257K |
| 代理商： | SMCJ6067 |
MSC1364.PDF 01/06/00
SMCG/J6036
thru
SMCG/J6072A
FEATURES:
BIDIRECTIONAL
1500 WATTS PEAK POWER
VOLTAGE RANGE FROM 5.5V TO 185V
LOW INDUCTANCE
LOW PROFILE PACKAGE FOR SURFACE MOUNTING
DESCRIPTION:
These Transient Voltage Suppressor devices are a series of Bi-directional Silicon
Transient Suppressors used in AC applications where large voltage transients can
permanently damage voltage-sensitive components.
These devices are manufactured using two silicon PN, junctions in a back to back
configuration. They are characterized by their high surge capability, fast response
time, and low impedance, (R
on
) for clamping surge.
The SMC series, rated for 1500 watts during a one millisecond pulse, can be used to
protect sensitive circuits against transients induced by lighting and inductive load
switching. The response time of TAZ clamping action is less than (5x10
-9
) sec;
therefore, they can protect Integrated Circuits, MOS devices, Hybrids, and other
voltage-sensitive semiconductors and components. This series of devices has also
been proven very effective as EMP and ESD suppressors.
MAXIMUM RATINGS:
1500 watts of peak pulse power dissipation at 25
°
C
t
clamping
(0 volts to V
(BR)
min): less than 5 x 10
-9
seconds
Operating and Storage Temperature: -65
°
to +150
°
C
Steady state power dissipation: 5.0 watts at T
L
= 25
°
C, at mounting plane.
Repetition rate (duty cycle): .01%
8700 E. Thomas Road
Scotsdale, AZ 85252
Phone: (480) 941-6300
Fax: (480) 947-1503
5.5 thru 185 Volts
1500 Watts
Transient Voltage
Suppressors
Mechanical
Characteristics
CASE: Molded, Surface
Mountable.
TERMINALS: Gull-wing or C-Bend
(modified J-bend) leads, tin lead
plated
POLARITY: No markings on
bi-directional devices.
PACKAGING: 16mm tape (See EIA
Std. RS-481.)
THERMAL RESISTANCE: 20
°
C/W
(typical) junction to lead (tab) at
mounting plane.
tp Pulse Time
Figure 1
Peak Pulse Power vs Pulse Time
P
P
k
DO-214AB
DO-215AB
100
10
0.1
1.0
100ns
1μs
10μs
100μs
1ms
10ms
(Wave Form - See
Figure 2)
Non- Repetitive
相關PDF資料 |
PDF描述 |
|---|---|
| SMCJ6067A | CMOS Triple 3-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJ6068 | CMOS Triple 3-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJ6068A | CMOS Triple 3-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJ6069 | CMOS Triple 3-Input NAND Gate 14-SO -55 to 125 |
| SMCJ6069A | CMOS Triple 3-Input NAND Gate 14-SO -55 to 125 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMCJ6067/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 121V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 121VWM 223VC SMCJ |
| SMCJ6067A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 128V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJ6067A/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 128V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 128VWM 213VC SMCJ |
| SMCJ6067AE3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 128V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 128VWM 213VC SMCJ |
| SMCJ6067E3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 121V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 121VWM 223VC SMCJ |
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