欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SMCJ8.5E3/TR13
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 參考電壓二極管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數: 1/6頁
文件大小: 475K
代理商: SMCJ8.5E3/TR13
1500W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
1/6
Copyright
2009
Aug Rev A
SMCJ5.0e3 to SMCJ440CAe3
Main product characteristics
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
Parameter
Value
Unit
PPPM
Peak power dissipation with a 10/1000s waveform
(2)(3) (fig.1)
1500
W
IPPM
Peak pulse current with a 10/1000s waveform
(2) (fig. 3)
See next table
A
IFSM
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
200
A
RΘJL
Typical thermal resistance junction to lead
15
C/W
RΘJA
Typical thermal resistance junction to ambient
75
C/W
TSTG
Storage temperature
-55 to +150
C
TJ
Junction temperature
-55 to +150
C
(1) All ratings at 25C unless specified otherwise
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2. rating is 300W above 78V.
(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
(4) Mounted on minimum recommended pad layout
(5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V
VWM
5.0V – 440V
VBR(min) - VBR(max)
6.40V – 543V
IPP
156.3A – 2.1A
VCL(MAX)
9.6V – 713V
PPP
1500W
RoHS
COMPLIANT
DO-214AB (SMC)
相關PDF資料
PDF描述
SK16T/R7 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AA
SS2030FLT/R7 2 A, 30 V, SILICON, RECTIFIER DIODE
SK24 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA
SD1030CS 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-252
SV1040T/R7 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-277
相關代理商/技術參數
參數描述
SMCJ8V0A 功能描述:TVS 二極管 - 瞬態電壓抑制器 8V 1500W SMC Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ8V0CA 功能描述:TVS 二極管 - 瞬態電壓抑制器 8V 1500W SMC Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ8V5A 功能描述:TVS 二極管 - 瞬態電壓抑制器 8.5V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ8V5CA 功能描述:TVS 二極管 - 瞬態電壓抑制器 8.5V 1500W Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ9.0 功能描述:TVS 二極管 - 瞬態電壓抑制器 9Vr 1500W 97.4A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
主站蜘蛛池模板: 丰都县| 新民市| 合肥市| 常熟市| 马边| 锡林浩特市| 邵武市| 安福县| 印江| 江山市| 游戏| 乐至县| 瑞安市| 梅州市| 乌拉特中旗| 稻城县| 平罗县| 湟源县| 泸定县| 庄浪县| 神池县| 汉寿县| 泸溪县| 黄龙县| 筠连县| 沿河| 易门县| 仪征市| 宁明县| 伊宁市| 宣威市| 黔西| 肥西县| 卓尼县| 镇坪县| 丰原市| 芦山县| 炎陵县| 高阳县| 通州区| 门头沟区|