欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: SMCJ85CE3/TR13
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 參考電壓二極管
英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/6頁
文件大小: 475K
代理商: SMCJ85CE3/TR13
1500W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
1/6
Copyright
2009
Aug Rev A
SMCJ5.0e3 to SMCJ440CAe3
Main product characteristics
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
Parameter
Value
Unit
PPPM
Peak power dissipation with a 10/1000s waveform
(2)(3) (fig.1)
1500
W
IPPM
Peak pulse current with a 10/1000s waveform
(2) (fig. 3)
See next table
A
IFSM
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
200
A
RΘJL
Typical thermal resistance junction to lead
15
C/W
RΘJA
Typical thermal resistance junction to ambient
75
C/W
TSTG
Storage temperature
-55 to +150
C
TJ
Junction temperature
-55 to +150
C
(1) All ratings at 25C unless specified otherwise
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2. rating is 300W above 78V.
(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
(4) Mounted on minimum recommended pad layout
(5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V
VWM
5.0V – 440V
VBR(min) - VBR(max)
6.40V – 543V
IPP
156.3A – 2.1A
VCL(MAX)
9.6V – 713V
PPP
1500W
RoHS
COMPLIANT
DO-214AB (SMC)
相關(guān)PDF資料
PDF描述
SB660CT 6 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
S1J 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
SD103A-35 0.35 A, 40 V, SILICON, SIGNAL DIODE, DO-35
SB1100S 1 A, 100 V, SILICON, SIGNAL DIODE
S15GYD2 15 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMCJ85CHE3/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ85CHE3/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ85CHE3/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 85V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ85E3/TR13 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 85V, ? 10%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 85VWM 151VC SMCJ
SMCJ8V0A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8V 1500W SMC Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
主站蜘蛛池模板: 马鞍山市| 田林县| 花莲市| 项城市| 英超| 崇信县| 临潭县| 随州市| 华安县| 翁牛特旗| 监利县| 肥城市| 方正县| 体育| 安塞县| 赫章县| 汉沽区| 台北市| 思茅市| 桂东县| 江安县| 灌云县| 车致| 屏山县| 湟中县| 通渭县| 郸城县| 曲阳县| 宜章县| 宜宾市| 武穴市| 清丰县| 西城区| 凉山| 济宁市| 延庆县| 黄梅县| 甘孜| 乌海市| 南城县| 博兴县|