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參數(shù)資料
型號: SMF5.0A/G1
廠商: GENERAL SEMICONDUCTOR INC
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
封裝: PLASTIC, SMF, 2 PIN
文件頁數(shù): 1/3頁
文件大小: 63K
代理商: SMF5.0A/G1
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000s waveform
(1)
PPPM
200
W
8/20s waveform
1000
Peak pulse current with a 10/1000s waveform
(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
20
A
uni-directional only
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Note: (1) Non-repetitive current pulse and derated above TA = 25°C
Detail Z
enlarged
0.00 – 0.10
Top View
1.0
± 0.2
1.8
± 0.1
2.8
± 0.1
0.98
± 0.1
0.05 - 0.30
3.7
± 0.2
0.60
± 0.25
5
°
5
°
Z
Cathode Band
SMF5.0A thru SMF51A
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 51V
Peak Pulse Power 1000W (8/20s pulse)
200W (10/1000s pulse)
Dimensions in
millimeters
DO-219AB (SMF)
1/21/02
Features
For surface mounted applications.
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accor-
dance with IEC 1000-4-4 (IEC801-4)
Glass passivated junction
Low incremental surge resistance, excellent
clamping capability
200W peak pulse power capability with a 10/1000s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
Mechanical Data
Case: Low-profile plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.01g
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
Mounting Pad Layout
New
Product
Patented
1.6
1.2
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