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參數資料
| 型號： | SML05SC12D3A.SEM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, DLCC3 VARIANT A, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 232K |
| 代理商： | SML05SC12D3A.SEM |
SILICON CARBIDE SCHOTTKY
RECTIFIER DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8697
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 1
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 1 of 3
SML05SC12DLCC3
Hermetic Ceramic Surface Mount Package
“D-5B” / “E-MELF” Compatible Footprint
1200V, 5A, Schottky Rectifier
Zero Forward and Reverse Recovery
High Frequency Operation
Fast Temperature Independent Switching
Positive Temperature Coefficient on VF
Space Level and High-Reliability Screening Options Available
Typical applications
Applications requiring high voltages low switching losses and fast switching speeds such as Switching Power Supplies,
Converters, Power Factor Conversion and Motor Drive and Free Wheeling Diodes
ABSOLUTE MAXIMUM RATINGS (T
J = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Voltage
1200V
VR
DC Reverse Voltage
1200V
VRWM Working Peak Reverse Voltage
1200V
IF(AV)
Average Forward Current (Tj = 175°C)
5A
IFRM
Repetitive Peak Forward Surge Current (tp = 8ms Half Sine Wave)
30A
IFSM
Non Repetitive Peak Forward Surge Current (tp = 10s pulse)
100A
TJ
Junction Temperature Range
-55 to +175°C
TSTG
Storage Temperature Range
-55 to +175°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IF = 5A
1.8
VFM(1)
Forward Voltage Drop
TJ = 175°C
3.0
V
VR = Rated VR
200
A
IR
Reverse Leakage Current
TJ = 175°C
1.0
mA
VR = 500V
IF = 1.0A
Qc
Total Capacitive Charge
di/dt = 500A/A
28
nC
VR = 0V
f = 1.0MHz
455
VR = 200V
f = 1.0MHz
45
CJ
Junction Capacitance
VR = 400V
f = 1.0MHz
33
pF
Notes
(1)
Pulse Width < 300s, Duty Cycle <2%
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