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參數(shù)資料
| 型號(hào)： | SML50A15 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)) |
| 中文描述： | N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：500V電壓，身份證（續(xù)）：14.7A，的Rds（on）：0.300Ω）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（減振鋼板基本：500V電壓，身份證（續(xù)）：14.7A，的Rds（on）：0.300Ω）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | SML50A15 |
SML50A15
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
14.7
58.8
±30
±40
155
1.24
–55 to 150
300
14.7
30
960
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 8.89mH, R
G
= 25
, Peak I
L
= 14.7A
V
DSS
I
D(cont)
R
DS(on)
0.300
500V
14.7A
Faster Switching
Lower Leakage
TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
(c3
25.15 (0.99)
10.67 (0.42)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
1
1
7.92 (0.312)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
TO–3 Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate
Pin 2 – Source
Case – Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML50A19 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)) |
| SML40A26 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)) |
| SML50A21 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω)) |
| SML50C15 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.27Ω)) |
| SML50H24 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):24A,Rds(on):0.190Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):24A,Rds(on):0.190Ω)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML50A19 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50A21 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50A21_07 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50A23 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50B20 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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