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參數(shù)資料
| 型號： | SML80H12 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)) |
| 中文描述： | N溝道增強模式高壓功率MOSFET（減振鋼板基本：800V的，身份證（續(xù)）：11.5A，的Rds（on）：0.67Ω）（不適用溝道增強型，高電壓功率馬鞍山場效應(yīng)管（減振鋼板基本：800V的，身份證（續(xù)）：11.5A，的Rds（on）：0.67Ω）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 26K |
| 代理商： | SML80H12 |
SML80H12
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
800
11.5
46
±30
±40
200
1.6
–55 to 150
300
11.5
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 18.3mH, R
G
= 25
, Peak I
L
= 11.5A
V
DSS
I
D(cont)
R
DS(on)
0.670
800V
11.5A
Faster Switching
Lower Leakage
TO–258 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
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|---|---|
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