
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/01A
1
Silicon Hyperabrupt Varactor Diode Chips
Features
I
High Q for Low Loss Resonators
I
Low Leakage Current
I
High Tuning Ratio for Wideband VCOs
I
SPICE Model Parameters
I
Small Footprint Chip Design
Description
Alpha Industries’ product line of silicon hyperabrupt
junction varactor diode chips are processed using
established ion-implantation technology resulting in low
R
S
wide tuning ratio devices with high Q values. These
planar chips have a small outline size (12 x 12 mils
SMV2019 to SMV2023
Electrical Specifications at 25°C
C
J
@ 0 V
(pF)
1
Typ.
2.3
3.1
4.5
7.1
10.8
C
J
@ 4 V
(pF)
C
J
@ 20 V
(pF)
Min.
0.13
0.23
0.32
0.48
0.78
Q @ 4 V
50 MHz
2
Min.
500
500
500
400
400
1 GHz
I
R
@17.6 V
(nA)
3
Max.
50
50
50
50
50
Contact
Diam. (mils)
4
Nom.
2.00
2.50
3.00
3.75
5.00
Part Number
R
S
@ 4 V (
)
Typ.
4.8
4.1
2.8
2.2
1.4
Min.
0.68
1.13
1.58
2.48
4.28
Max.
0.88
1.43
1.98
3.08
5.28
Max.
0.23
0.33
0.44
0.68
1.08
SMV2019-000
SMV2020-000
SMV2021-000
SMV2022-000
SMV2023-000
nominal) and are fully passivated resulting in low
leakage current and high reliability.These varactor chips
are intended for assembly in hybrid integrated circuit
resonators used in VCOs and analog tuned filters.
1. All capacitance values specified at 1 MHz.
2. 50 MHz Q calculated from 1 GHz R
S
and 1 MHz C
J
.
3.V
at 10
μ
A specified at 22 V Min.
4. Outline drawing 149-801.
Characteristic
Value
Reverse Voltage (V
R
)
Forward Current (I
F
)
Power Dissipation at 25°C (P
D
)
Operating Temperature (T
OP
)
Storage Temperature (T
ST
)
22 V
100 mA
250 mW
-55°C to +150°C
-65°C to +200°C
Absolute Maximum Ratings
0.010 (0.254 mm) MIN.
0.014 (0.356 mm) MAX. SQ.
ANODE METALIZED GOLD DOT
0.002 (0.051 mm) DIA. MIN.
CATHODE METALIZED BACK
CONTACT - GOLD
SILICON
0.004 (0.127 mm) MIN.
0.006 (0.152 mm) MAX.
Outline Drawing
149-801