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參數資料
| 型號： | SP8M7 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Switching |
| 中文描述： | 開關 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 76K |
| 代理商： | SP8M7 |
SP8M7
Transistors
Switching
1/5
SP8M7
z
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
z
Application
Power switching, DC / DC converter.
z
Absolute maximum ratings
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
SOP8
Each lead has same dimensions
5.0
±
0.2
(
0.2
±
0.1
6
±
0
3
±
0
0
±
0
(
(
(
M
1.27
0
0.4
±
0.1
0.1
1
±
0
Parameter
V
V
A
A
A
A
W
°
C
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Symbol
Nchannel
30
±
20
±
5.0
±
20
1.6
6.4
Pchannel
30
±
20
±
7.0
±
28
1.6
28
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (T
C
=
25
°
C)
Channel temperature
Storage temperature
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 MOUNTED ON A CERAMIC BOARD.
z
Thermal resistance
(Ta=25
°
C)
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
2
150
55 to
+
150
2
150
55 to
+
150
1
1
2
z
Equivalent circuit
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
2
1
(8)
(7)
(1)
(2)
2
1
(6)
(5)
(3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
°
C / W
Rth (ch-A)
62.5
Parameter
Symbol
Limits
Unit
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
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| SP8M7TB | 功能描述:MOSFET N+P 30V 5A 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:- 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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| SP8M8FU6TB | 功能描述:MOSFET SWITCHING Nch/Pch 4V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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