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參數(shù)資料
| 型號： | SPA07N65C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 299K |
| 代理商： | SPA07N65C3 |
2004-04-07
Rev. 1.0
Page 1
SPP07N65C3, SPI07N65C3
SPA07N65C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
730
V
A
0.6
7.3
P-TO220-3-31
P-TO220-3-1
P-TO262-3-1
2
P-TO220-3-1
23
1
P-TO220-3-31
1
2
3
Marking
07N65C3
07N65C3
07N65C3
Type
SPP07N65C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4624
SPI07N65C3
P-TO262-3-1
Q67040-S4623
SPA07N65C3
P-TO220-3-31 Q67040-S4622
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
7.3
4.6
7.3
1)
4.6
1)
A
I
D puls
E
AS
21.9
21.9
A
I
D
=1.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=2.5A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
230
230
mJ
E
AR
0.5
0.5
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
2.5
2.5
A
±20
±
30
83
±20
±
30
32
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55...+150
°C
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