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參數資料
| 型號： | SPB-G56SVL |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | SPB-G56SVL |
SPB-64S
SPJ-63S
10
20
50
40
30
0
1
5
50
10
20ms
IFSM
(A)
Parameter
Type No.
Absolute Maximum Ratings
VRM
(V)
IF (AV)
(A)
IFSM
(A)
VF
(V)
IF
(A)
IF
/IRP
(mA)
Rth ( j-c)
IR
(mA)
IR (H)
(mA)
trr
(ns)
Tj
(
°C)
Tstg
(
°C)
Electrical Characteristics (Ta =25
°C)
(
°C/W)
(g)
Mass
Remarks
Center-tap
1 Chip
Others
SPB-64S
6.0
40
30
60
3.0
5.0
50
60
100
60
0.55
0.7
0.6
3.0
3.5
5.0
0.75
50
100/100
0.45
3.0
30
(Tj =125
°C)
——
–40 to +150
5.0
0.29
1.04
0.29
SPB-G34S
SPB-G54S
6.0
15.0
5.0
7.5
5.0
3.0
50
100/100
50
(Tj =150
°C)
2.5
——
SPB-G56S
A
B
10
20
50
40
30
0
1
5
50
10
20ms
IFSM
(A)
10
20
50
40
30
0
1
5
50
10
20ms
IFSM
(A)
SPB-G34S
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
010
30
50
60
20
40
SPJ-63S
6.0
MPE-24H
80
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
6.0
VR=40V
100
95
105
110
115
120
125
0
1.0
0.5
2.0
1.5
2.5
3.0
VR=40V
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Sinewave
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Ta 125C
=
60C
100C
27C
100C
Ta 125C
=
60C
27C
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta 125C
=
60C
100C
28C
100
10
1
0.1
0.01
0.005
010
30
50
60
20
40
100C
Ta 125C
=
60C
28C
6.5±0.4
2.3±
0.4
5.4
4.9
4.1
5.4±
0.4
1.7
±0.5
5.5
±0.4
2.5
±0.4
0.8
±0.1
0.8
1.5 max
±0.1
0.55 ±
0.1
0.55 ±
0.1
1.15
12
3
±0.1
1.2max
2.29±
0.5 2.29±0.5
0 to 0.25
0.5
±0.2
2.9
0.16
1.37
5.0
0.7
VR=VRM, Ta=100
°C
max per element
VR =VRM
max per element
86
1.2
1.27
10.2
0.86
0.76
2.54
4.44
1.3
2.59
0.4
3.19
1.3
8.5
10.0
11.3
11.0
1.4
Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V
50Hz
Half-cycle Sinewave
Single Shot
max per
element
Fig.
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF—IF Characteristics (Typical)
Overcurrent Cycles
IFMS Rating
Peak
For
ward
Surge
Current
I
FSM
(A)
Overcurrent Cycles
IFMS Rating
Peak
For
ward
Surge
Current
I
FSM
(A)
Reverse Voltage
VR (V)
Reverse
Current
I
R
(mA)
VR—IR Characteristics (Typical)
Case Temperature Tc
(
°C)
Average
Forward
Current
I
F
(AV)
(A)
Tc —IF(AV) Derating
Forward Voltage VF (V)
Forward
Current
I
F
(A)
VF—IF Characteristics (Typical)
Overcurrent Cycles
IFMS Rating
Peak
For
ward
Surge
Current
I
FSM
(A)
Reverse Voltage
VR (V)
Reverse
Current
I
R
(mA)
VR—IR Characteristics (Typical)
Case Temperature Tc
(
°C)
Average
Forward
Current
I
F
(AV)
(A)
Tc —IF(AV) Derating
Sinewave
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
Type No.
Polarity
Lot No.
13
2 (Common to backside of case)
N.C
1 Chip
Anode
Cathode
Anode
Center-tap
Anode
Cathode (Common)
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