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參數資料
| 型號： | SPB11N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | JFETs |
| 英文描述： | OptiMOS Power-Transistor( MOS 型功率晶體管) |
| 中文描述： | 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 116K |
| 代理商： | SPB11N60S5 |
1
2000-01-27
SPP11N60S5
SPB11N60S5
Cool MOS
Power-Transistor
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dvdt rated
·
Optimized capacitances
·
Improved noise immunity
·
Former development designation:
SPPx2N60S5/SPBx2N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPP11N60S5 600 V 11 A
SPB11N60S5
V
DS
I
D
R
DS(on)
0.38
W
Package
P-TO220-3-1
P-TO263-3-2
Marking
11N60S5
11N60S5
Ordering Code
Q67040-S4198
Q67040-S4199
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
= 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 5.5 A,
V
DD
= 50 V
Avalanche energy (repetitive, limited by
T
jmax
)
I
D
= 13.8 A,
V
DD
= 50 V
Avalanche current (repetitive, limited by
T
jmax
)
Reverse diode dvdt
I
S
= 11 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
I
D
Value
11
7
Unit
A
I
D puls
22
E
AS
340
mJ
E
AR
1
I
AR
dvdt
13.8
6
A
kV/μs
V
GS
P
tot
±
20
125
V
W
T
j ,
T
stg
-55... +150
°C
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| SPB11N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N D2-PAK |
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